Hafnia-based oxide enhanced Ga2O3-based photodetectors via band engineering with ultralarge responsivity

Author:

Wu Han1,Shen Jiaying2,Shu Lincong3ORCID,Dai Jie4,Sha Shulin5,Liu Zeng6ORCID,Tang Weihua3,Wang Yuehui7ORCID,Wu Zhenping2ORCID,Lin Kun1,Li Qiang1ORCID,Miao Jun1ORCID,Xing Xianran1ORCID

Affiliation:

1. Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, University of Science and Technology Beijing, Beijing 100083, China. E-mail:

2. State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China

3. College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China

4. Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China

5. College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing 211106, China

6. School of Electronic Information Engineering, Inner Mongolia University, Hohhot 010021, China

7. Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing 100871, China

Abstract

β-Ga2O3 photodetectors achieve ultrahigh responsivity under low supply voltage and ultralow light intensity conditions via band engineering with polar Hf0.5Zr0.5O2 as an insert layer.

Funder

National Basic Research Program of China

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

Publisher

Royal Society of Chemistry (RSC)

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