Reduction of Carbon Impurity in Silicon Nitride Films Deposited from Metalorganic Source
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/43/i=2A/a=L148/pdf
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Control of the chemical composition of silicon carbon nitride films formed from hexamethyldisilazane in H2/NH3 mixed gas atmospheres by hot-wire chemical vapor deposition;Thin Solid Films;2020-02
2. Growth of diamond thin films on SiCN underlayers by hot filament chemical vapor deposition;Thin Solid Films;2017-08
3. Application of Si-N Insulating Layer to CPP-GMR Device;Journal of the Magnetics Society of Japan;2009
4. Deposition of SiCN films using organic liquid materials by HWCVD method;Thin Solid Films;2006-04
5. Mass-Spectrometric Studies of Catalytic Chemical Vapor Deposition Processes of Organic Silicon Compounds Containing Nitrogen;Japanese Journal of Applied Physics;2006-02-08
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