Gate Oxide Reliability Characterization of Tungsten Polymetal Gate with Low-Contact-Resistive WSix/WN Diffusion Barrier in Memory Devices-Reference-Cited by-同舟云学术

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Gate Oxide Reliability Characterization of Tungsten Polymetal Gate with Low-Contact-Resistive WSix/WN Diffusion Barrier in Memory Devices

Published:2007-11-06 Issue:11 Volume:46 Page:7256-7262
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Sung Min Gyu,Lim Kwan-Yong,Cho Heung-Jae,Lee Seung Ryong,Jang Se-Aug,Kim Yong Soo,Kim Tae-Yoon,Yang Hong-Seon,Ku Ja-Chun,Kim Jin Woong

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference10 articles.

1. W-Polymetal Gate with Low W/Poly-Si Interface Resistance for High-Speed/High-Density Embedded Memory

2. Degradation of Nitride/W/WNx/Poly-Si Gate Stack by Post-Thermal Processes

3. A direct measurement of interfacial contact resistance

4. Plasma enhanced chemical vapor deposition of SiN-films for passivation of three-dimensional substrates

5. Rapid thermal annealing of WSix

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Atomic layer deposited tungsten nitride thin films as a new lithium-ion battery anode;Physical Chemistry Chemical Physics;2015

2. Optimization of Tungsten Dual Poly-Metal Gates in Memory Devices with Ti/WN/WSiN Barrier Metal;Journal of Nanoscience and Nanotechnology;2013-09-01

3. Negative Bias Temperature Instability for Sputtering Modification in a TiN Diffusion Barrier of p+ Polysilicon Gate Stack in 50-nm DRAM Technology;IEEE Transactions on Device and Materials Reliability;2013-03

4. Low resistive tungsten dual poly-metal gates with multi-diffusion barrier metals in high performance memory devices;Solid-State Electronics;2012-03

5. Tungsten-dual polymetal technology for low resistive gate electrode;Solid-State Electronics;2010-06

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