Mechanism of Oxidation of Si Surfaces Exposed to O2/Ar Microwave-Excited Plasma
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference20 articles.
1. Plasma-assisted oxidation, anodization, and nitridation of silicon
2. General Relationship for the Thermal Oxidation of Silicon
3. Mechanisms of silicon oxidation at low temperatures by microwave‐excited O2gas and O2‐N2mixed gas
4. Magnetically Excited Plasma Oxidation of Si
5. Growth of ultrathin SiO2 on Si by surface irradiation with an O2+Ar electron cyclotron resonance microwave plasma at low temperatures
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2. Formation and Characterization of Thin Silicon Dioxide Films Obtained by Inductively-Coupled High-Density Plasmas using a Dual Rotated Spiral Antenna System;ECS Transactions;2019-12-17
3. Loop Type of Inductively Coupled Thermal Plasmas System for Rapid Two-Dimensional Oxidation of Si Substrate Surface;Plasma Chemistry and Plasma Processing;2018-02-22
4. Rapid Surface Oxidation of the Si Substrate Using Longitudinally Long Ar/O2Loop Type of Inductively Coupled Thermal Plasmas;IEEE Transactions on Plasma Science;2016-12
5. (Invited) Low-Temperature Microwave-Based Plasma Oxidation of Ge and Oxidation of Silicon Followed by Plasma Nitridation;ECS Transactions;2016-05-04
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