Theory of Short-Channel Surrounding-Gate Metal–Oxide–Semiconductor Field-Effect-Transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference14 articles.
1. An analytical solution to a double-gate MOSFET with undoped body
2. Analytic solutions of charge and capacitance in symmetric and asymmetric double-gate MOSFETs
3. Double-gate CMOS: symmetrical- versus asymmetrical-gate devices
4. Single, double and surround gate vertical MOSFETs with reduced parasitic capacitance
5. Modeling of Nanoscale Gate-All-Around MOSFETs
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1. A Gaussian approach for analytical subthreshold current model of cylindrical nanowire FET with quantum mechanical effects;Microelectronics Journal;2016-07
2. Subthreshold Behaviors of Nanoscale Silicon and Germanium Junctionless Cylindrical Surrounding-Gate MOSFETs;Physical Sciences Reviews;2016-04-30
3. Analytical models for channel potential, threshold voltage, and subthreshold swing of junctionless triple-gate FinFETs;Microelectronics Journal;2016-04
4. Quantum mechanical effects on the threshold voltage of surrounding-gate MOSFETs;Microelectronics Journal;2012-11
5. Effects of Unintended Dopants on I-V Characteristics of the Double-Gate MOSFETs, a Simulation Study;Communications in Theoretical Physics;2012-07
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