Quantum mechanical effects on the threshold voltage of surrounding-gate MOSFETs
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference22 articles.
1. An analytic potential model for symmetric and asymmetric double gate MOSFETs;Lu;IEEE Trans. Electron Devices,2006
2. Explicit continuous models for double-gate and surrounding-gate MOSFETs;Yu;IEEE Trans. Electron Devices,2007
3. Design and performance analysis of double-gate MOSFET over single-gate MOSFET for RF switch;Srivastava;Microelectron. J.,2011
4. Electric potential and threshold voltage models for double-gate Schottky-barrier source/drain MOSFETs;Li;Microelectron. J.,2011
5. A non-charge-sheet analytic model for symmetric double-gate MOSFETs with smooth transition between partially and fully depleted operation modes;Liu;IEEE Trans. Electron Devices,2008
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2. Optimized Design of Multi-Zone Junction Termination Extension for High Voltage Power Devices (IGBTs);Journal of Nanoscience and Nanotechnology;2017-08-01
3. Modeling gate-all-around Si/SiGe MOSFETs and circuits for digital applications;Journal of Computational Electronics;2016-12-19
4. A New Threshold Voltage and Drain Current Model for Lightly/Heavily Doped Surrounding Gate MOSFETs;Journal of Computational and Theoretical Nanoscience;2015-09-01
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