Electric potential and threshold voltage models for double-gate Schottky-barrier source/drain MOSFETs

Author:

Li Peicheng,Hu Guangxi,Liu Ran,Tang Tingao

Publisher

Elsevier BV

Subject

General Engineering

Reference18 articles.

1. A computational study of thin-body, double-gate, Schottky barrier MOSFETs;Guo;IEEE Transactions on Electron Devices,2002

2. Analytical threshold voltage model for double-gate Schottky source/drain silicon-on-insulator metal semiconductor field effect transistor;Tanabe;Japanese Journal of Applied Physics,2008

3. B.J. Xu, Z.L. Xia, X.Y. Liu, R.Q. Han, An analytical potential model of double-gate MOSFETs with Schottky source/drain, in: Proceedings of the ICSICT, Beijing, China, 2006, pp. 1296–1298.

4. A compact model for undoped silicon-nanowire MOSFETs with Schottky-Barrier source/drain;Zhu;IEEE Transactions on Electron Devices,2009

5. A comparison study of symmetric ultrathin-body double-gate devices with metal source/drain and doped source/drain;Xiong;IEEE Transactions on Electron Devices,2005

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