RF analysis and temperature characterization of pocket doped L-shaped gate tunnel FET
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science,General Chemistry
Link
http://link.springer.com/content/pdf/10.1007/s00339-019-3032-8.pdf
Reference34 articles.
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3. Hu C et al. Prospect of tunneling green transistor for 0.1 V CMOS. In: Proceeding of the IEEE IEDM, pp 1–4 (2010)
4. U.E. Avci, D.H. Morris, I.A. Young, Tunnel field-effect transistors: prospects and challenges. J. Electron. Devices Soc. (2015). https://doi.org/10.1109/jeds.2015.2390591
5. P.G.D. Agopian, M.D.V. Martino, S.G.D.S. Filho, J.A. Martino, R. Rooyackers, D. Leonelli, C. Claeys, Temperature impact on the tunnel fet off-state current components. Solid-State Electron. 28, 141–146 (2012)
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