A Compact Model for Undoped Silicon-Nanowire MOSFETs With Schottky-Barrier Source/Drain-Reference-Cited by-同舟云学术

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A Compact Model for Undoped Silicon-Nanowire MOSFETs With Schottky-Barrier Source/Drain

Published:2009-05 Issue:5 Volume:56 Page:1100-1109
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Zhu Guojun,Zhou Xing,Lee Teck Seng,Ang Lay Kee,See Guan Huei,Lin Shihuan,Chin Yoke-King,Pey Kin Leong

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/4839017/04798209.pdf?arnumber=4798209

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3. Design of Low Power Analog/RF Signal Processing Circuits Using 22 nm Silicon-on-Insulator Schottky Barrier Nano-Wire MOSFET;International Journal of High Speed Electronics and Systems;2024-01-23

4. Simulation of a Vertical Ballistic Quantum-Barrier Field-Effect Transistor Based on an Undoped AlxGa1–xAs Quantum Nanowire;Russian Microelectronics;2023-12

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