Design and performance analysis of double-gate MOSFET over single-gate MOSFET for RF switch

Author:

Srivastava Viranjay M.,Yadav K.S.,Singh G.

Publisher

Elsevier BV

Subject

General Engineering

Reference46 articles.

1. An effective potential approach to modeling 25nm MOSFET devices;Ahmed;J. Comput. Electron.,2010

2. International technology roadmap for semiconductors, 2008, 〈www.public.itrs.net〉.

3. New generation of predictive technology model for sub 45nm design exploration;Zhao;IEEE Trans. Electron Devices,2006

4. Electrical Characterization of SOI Materials and Devices;Cristoloveanu,1995

5. 1/f Noise: threshold voltage and ON-current fluctuations in 45nm device technology due to charged random traps;Ashraf;J. Comput. Electron.,2010

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