Inverter and Universal Gates Implementation Using Novel Core Insulator Double Gate (CIDG) MOSFETs-Reference-Cited by-同舟云学术

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Inverter and Universal Gates Implementation Using Novel Core Insulator Double Gate (CIDG) MOSFETs

Published:2024-02-13 Issue: Volume: Page:1-10
ISSN:0377-2063
Container-title:IETE Journal of Research
language:en
Short-container-title:IETE Journal of Research

Author:

Jaiswal Sushmita¹,Gupta Santosh Kumar¹

Affiliation:

1. ECED, Motilal Nehru National Institute of Technology Allahabad, Prayagraj, Uttar Pradesh 211004, India

Publisher

Informa UK Limited

Link

https://www.tandfonline.com/doi/pdf/10.1080/03772063.2024.2309229

Reference50 articles.

1. Wanlass's CMOS circuit

2. A. H. Medwin “Semiconductor translating circuit ” USA Patent US3390314A Filed by RCA Corp. Oct 1964. A. H. Medwin

3. Cramming more components onto integrated circuits;Moore G. E.;Proc. IEEE,1965

4. Moore's law: past, present and future

5. A. Diebold and C. Hacker “International technology roadmap for semiconductors ” ITRS 2012. [Online]. A. Diebold C. Hacker

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