An analytical subthreshold current modeling of cylindrical gate all around (CGAA) MOSFET incorporating the influence of device design engineering-Reference-Cited by-同舟云学术

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An analytical subthreshold current modeling of cylindrical gate all around (CGAA) MOSFET incorporating the influence of device design engineering

Published:2014-04 Issue:4 Volume:45 Page:408-415
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Pratap Yogesh,Ghosh Pujarini^ORCID,Haldar Subhasis,Gupta R.S.,Gupta Mridula

Publisher

Elsevier BV

Subject

General Engineering

Reference32 articles.

1. A new compact subthreshold behavior model for dual-material surrounding gate (DMSG) MOSFET;Chiang;Solid State Electron.,2009

2. Precise analytical model for short channel cylindrical gate (CylG) gate-all-around (GAA) MOSFET;Sharma;Solid State Electron.,2013

3. Analytical solution of subthreshold channel potential of gate underlap cylindrical gate-all-around MOSFET;Zhang;Solid State Electron,2010

4. Two dimensional analytical subthreshold model of nanoscale cylindrical surrounding gate MOSFET including impact of localised charges;Gautam;J. Comput. Theor. Nanosci.,2012

5. Analog/RF performance of Si nanowire MOSFETs and the impact of process variation;Wang;IEEE Trans. Electron Devices,2007

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