Analytical solution of subthreshold channel potential of gate underlap cylindrical gate-all-around MOSFET-Reference-Cited by-同舟云学术

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Analytical solution of subthreshold channel potential of gate underlap cylindrical gate-all-around MOSFET

Published:2010-08 Issue:8 Volume:54 Page:806-808
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Zhang Lining,Ma Chenyue,He Jin,Lin Xinnan,Chan Mansun

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Multiple-gate SOI MOSFETs

2. Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFET's

3. Modeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity

4. Modeling and Optimization of Fringe Capacitance of Nanoscale DGMOS Devices

5. Nanoscale FinFETs with gate-source/drain underlap

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