Characterisation and Analysis of Schottky-Tube FET exhibiting Superior Characteristic Parameters
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
https://link.springer.com/content/pdf/10.1007/s13369-022-07200-x.pdf
Reference30 articles.
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4. Wang, R.; Zhuge, J.; Huang, R.; Tian, Y.; Xiao, H.; Zhang, L.; Wang, Y.: Analog/RF performance of Si nanowire MOSFETs and the impact of process variation. IEEE Trans. Electron Devices 54(6), 1288–1294 (2007)
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