Large Coulomb-Blockade Oscillations and Negative Differential Conductance in Silicon Single-Electron Transistors with [100]- and [110]-Directed Channels at Room Temperature-Reference-Cited by-同舟云学术

Large Coulomb-Blockade Oscillations and Negative Differential Conductance in Silicon Single-Electron Transistors with [100]- and [110]-Directed Channels at Room Temperature

Published:2007-01-10 Issue:1 Volume:46 Page:24-27
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kobayashi Masaharu,Hiramoto Toshiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference15 articles.

1. Fabrication technique for Si single-electron transistor operating at room temperature

2. Coulomb blockade oscillations at room temperature in a Si quantum wire metal‐oxide‐semiconductor field‐effect transistor fabricated by anisotropic etching on a silicon‐on‐insulator substrate

3. Silicon single-electron quantum-dot transistor switch operating at room temperature

4. Extension of Coulomb blockade region by quantum confinement in the ultrasmall silicon dot in a single-hole transistor at room temperature

5. Tunneling Barrier Structures in Room-Temperature Operating Silicon Single-Electron and Single-Hole Transistors

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Transport Characteristics of Silicon Multi-Quantum-Dot Transistor Analyzed by Means of Experimental Parametrization Based on Single-Hole Tunneling Model;Nanomaterials;2023-06-05

2. Reduced Electron Temperature in Silicon Multi-Quantum-Dot Single-Electron Tunneling Devices;Nanomaterials;2022-02-11

3. Strong dependence of tunneling transport properties on overdriving voltage for room-temperature-operating single electron/hole transistors formed with ultranarrow [100] silicon nanowire channel;Applied Physics Letters;2008-07-28

4. On the Origin of Negative Differential Conductance in Ultranarrow-Wire-Channel Silicon Single-Electron and Single-Hole Transistors;Japanese Journal of Applied Physics;2008-03-14

5. Experimental study on quantum confinement effects in silicon nanowire metal-oxide-semiconductor field-effect transistors and single-electron transistors;Journal of Applied Physics;2008-03