Silicon single-electron quantum-dot transistor switch operating at room temperature
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121014
Reference14 articles.
1. Observation of quantum effects and Coulomb blockade in silicon quantum‐dot transistors at temperatures over 100 K
2. Size dependence of the characteristics of Si single-electron transistors on SIMOX substrates
3. Fabrication of silicon nanopillars containing polycrystalline silicon/insulator multilayer structures
4. Coulomb blockade oscillations at room temperature in a Si quantum wire metal‐oxide‐semiconductor field‐effect transistor fabricated by anisotropic etching on a silicon‐on‐insulator substrate
5. A triangle-shaped nanoscale metal–oxide–semiconductor device
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