Strong dependence of tunneling transport properties on overdriving voltage for room-temperature-operating single electron/hole transistors formed with ultranarrow [100] silicon nanowire channel-Reference-Cited by-同舟云学术

Strong dependence of tunneling transport properties on overdriving voltage for room-temperature-operating single electron/hole transistors formed with ultranarrow [100] silicon nanowire channel

Published:2008-07-28 Issue:4 Volume:93 Page:043508
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lee Sejoon,Hiramoto Toshiro

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2958224

Reference15 articles.

1. Manipulation and detection of single electrons for future information processing

2. Extension of Coulomb blockade region by quantum confinement in the ultrasmall silicon dot in a single-hole transistor at room temperature

3. Voltage gain dependence of the negative differential conductance width in silicon single-hole transistors

4. Control of full width at half maximum of Coulomb oscillation in silicon single-hole transistors at room temperature

5. Extremely high flexibilities of Coulomb blockade and negative differential conductance oscillations in room-temperature-operating silicon single hole transistor

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