Voltage gain dependence of the negative differential conductance width in silicon single-hole transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2192637
Reference22 articles.
1. Single-electron devices and their applications
2. Fabrication technique for Si single-electron transistor operating at room temperature
3. Coulomb blockade oscillations at room temperature in a Si quantum wire metal‐oxide‐semiconductor field‐effect transistor fabricated by anisotropic etching on a silicon‐on‐insulator substrate
4. Quantum mechanical effects in the silicon quantum dot in a single-electron transistor
5. Silicon single-electron quantum-dot transistor switch operating at room temperature
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