Phonon-Limited Electron Mobility Behavior and Inherent Mobility Reduction Mechanism of Ultrathin Silicon-on-Insulator Layer with (111) Surface and Ultrathin Germanium-on-Insulator Layer with (001) Surface-Reference-Cited by-同舟云学术

Phonon-Limited Electron Mobility Behavior and Inherent Mobility Reduction Mechanism of Ultrathin Silicon-on-Insulator Layer with (111) Surface and Ultrathin Germanium-on-Insulator Layer with (001) Surface

Published:2007-12-06 Issue:12 Volume:46 Page:7654-7661
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yamamura Tsuyoshi,Sato Shingo,Omura Yasuhisa

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference18 articles.

1. Phonon-limited inversion layer electron mobility in extremely thin Si layer of silicon-on-insulator metal-oxide-semiconductor field-effect transistor

2. Electronic structures and phonon-limited electron mobility of double-gate silicon-on-insulator Si inversion layers

3. Physically based modeling of low field electron mobility in ultrathin single- and double-gate SOI n-MOSFETs

4. On the universality of inversion layer mobility in Si MOSFET's: Part II-effects of surface orientation

5. Experimental Study of Effective Carrier Mobility of Multi-Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors with (111) Channel Surface Fabricated by Orientation-Dependent Wet Etching

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3. Low-Temperature Behaviors of Phonon-Limited Electron Mobility of Sub-10-nm-Thick Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistor with (001) and (111) Si Surface Channels;Japanese Journal of Applied Physics;2009-07-21