Low-Temperature Behaviors of Phonon-Limited Electron Mobility of Sub-10-nm-Thick Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistor with (001) and (111) Si Surface Channels
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference29 articles.
1. Physical Model of Noise Mechanisms in SOI and Bulk-Silicon MOSFETs for RF Applications
2. Low-Temperature Performance of Nanoscale MOSFET for Deep-Space RF Applications
3. Phonon-limited inversion layer electron mobility in extremely thin Si layer of silicon-on-insulator metal-oxide-semiconductor field-effect transistor
4. Electronic structures and phonon-limited electron mobility of double-gate silicon-on-insulator Si inversion layers
5. Physically based modeling of low field electron mobility in ultrathin single- and double-gate SOI n-MOSFETs
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Impact of Band Structure on Phonon-Limited Electron Mobility Behavior of Germanium-on-Insulator Layer with (001) and (111) Surfaces;Jordan Journal of Electrical Engineering;2021
2. Temperature Dependence of Electron Mobility in Uniaxial Strained nMOSFETs;JSTS:Journal of Semiconductor Technology and Science;2014-04-30
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