Phonon-limited inversion layer electron mobility in extremely thin Si layer of silicon-on-insulator metal-oxide-semiconductor field-effect transistor
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366480
Reference14 articles.
1. SOI MOSFET effective channel mobility
2. Mobility-field behavior of fully depleted SOI MOSFET's
3. Electron mobility behavior in extremely thin SOI MOSFET's
4. Physical basis and limitation of universal mobility behavior in fully depleted silicon-on-insulator Si inversion layers
5. On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration
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1. Physics and Electrical Diagnostics of Nanoelectronic Silicon-On-Insulator Structures and Devices;2023
2. Impact of Band Structure on Phonon-Limited Electron Mobility Behavior of Germanium-on-Insulator Layer with (001) and (111) Surfaces;Jordan Journal of Electrical Engineering;2021
3. Ion/Ioff ratio enhancement and scalability of gate-all-around nanowire negative-capacitance FET with ferroelectric HfO2;Solid-State Electronics;2017-10
4. Electron mobility enhancement in nanoscale silicon-on-insulator diffusion layers with high doping concentration of greater than 1 × 1018cm−3and silicon-on-insulator thickness of less than 10 nm;Journal of Applied Physics;2011-08
5. Hall Factor in Ultrathin-Body Silicon-on-Insulator n-Type Metal–Oxide–Semiconductor Field-Effect Transistors;Japanese Journal of Applied Physics;2010-04-20
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