Physical basis and limitation of universal mobility behavior in fully depleted silicon-on-insulator Si inversion layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.364141
Reference11 articles.
1. Observation of mobility enhancement in ultrathin SOI MOSFETs
2. On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration
3. On the universality of inversion layer mobility in Si MOSFET's: Part II-effects of surface orientation
4. Simulation of linear and nonlinear electron transport in homogeneous silicon inversion layers
5. SOI MOSFET effective channel mobility
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