Electron mobility enhancement in nanoscale silicon-on-insulator diffusion layers with high doping concentration of greater than 1 × 1018cm−3and silicon-on-insulator thickness of less than 10 nm-Reference-Cited by-同舟云学术

Electron mobility enhancement in nanoscale silicon-on-insulator diffusion layers with high doping concentration of greater than 1 × 1018cm−3and silicon-on-insulator thickness of less than 10 nm

Published:2011-08 Issue:3 Volume:110 Page:034502
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kadotani Naotoshi,Takahashi Tsunaki,Ohashi Teruyuki,Oda Shunri,Uchida Ken

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3606420

Reference33 articles.

1. Electrical Properties of Silicon Containing Arsenic and Boron

2. Impurity and Lattice Scattering Parameters as Determined from Hall and Mobility Analysis inn-Type Silicon

3. Relationship between resistivity and phosphorus concentration in silicon

4. Electrical Properties of Heavily Doped Silicon

5. Electron mobility empirically related to the phosphorus concentration in silicon

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