Phosphorus Deactivation and Electron Mobility Enhancement in Ultrathin Silicon Nanosheets-Reference-Cited by-同舟云学术

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Phosphorus Deactivation and Electron Mobility Enhancement in Ultrathin Silicon Nanosheets

Published:2023-06-11 Issue: Volume: Page:
ISSN:
Container-title:2023 Silicon Nanoelectronics Workshop (SNW)
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Author:

Perego Michele¹,Pulici Andrea¹,Kuschlan Stefano¹,Seguini Gabriele¹,Taglietti Fabiana²,Fanciulli Marco¹,Chiarcos Riccardo³,Laus Michele³

Affiliation:

1. CNR-IMM, Unit of Aerate Brianza,Aerate,Brianza,Italy,1-20864

2. Università degli Studi di Milano-Bicocca,Milano,Italy,I-20125

3. Università del Piemonte Orientale “A. Avogadro”,Alessandria,Italy,1-15121

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10183871/10183917/10183976.pdf?arnumber=10183976

Reference8 articles.

1. Electron mobility enhancement in nanoscale silicon-on-insulator diffusion layers with high doping concentration of greater than 1 × 1018cm−3and silicon-on-insulator thickness of less than 10 nm

2. Physics of Semiconductor Devices

3. Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride

4. Doping of silicon by phosphorus end-terminated polymers: drive-in and activation of dopants

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The study of electron mobility on ultra-scaled silicon nanosheet FET;Physica Scripta;2024-06-21

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