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Improvement of Uniformity of Resistive Switching Parameters by Selecting the Electroformation Polarity in IrO$_{x}$/TaO$_{x}$/WO$_{x}$/W Structure

  • Published:2012-04-20 Issue: Volume:51 Page:04DD06
  • ISSN:0021-4922
  • Container-title:Japanese Journal of Applied Physics
  • language:en
  • Short-container-title:Jpn. J. Appl. Phys.

Author:

Prakash Amit,Maikap Siddheswar,Lai Chao Sung,Lee Heng Yuan,Chen W. S.,Chen Frederick T.,Kao Ming Jer,Tsai Ming Jinn

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

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3. Single-Event Effects Induced by Heavy Ions in 40nm Resistive Random Access Memory;2022 IEEE 6th Advanced Information Technology, Electronic and Automation Control Conference (IAEAC );2022-10-03

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