Single-Event Effects Induced by Heavy Ions in 40nm Resistive Random Access Memory
Author:
Affiliation:
1. Beijing Microelectronics Technology Institute,Beijing,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9929429/9929329/09929884.pdf?arnumber=9929884
Reference10 articles.
1. Investigation on the Response of TaO$_{\rm x}$-based Resistive Random-Access Memories to Heavy-Ion Irradiation
2. Improvement of Uniformity of Resistive Switching Parameters by Selecting the Electroformation Polarity in IrOx/TaOx/WOx/W Structure
3. Heavy Ion Radiation Effects on Hafnium Oxide-Based Resistive Random Access Memory
4. Scaling Trends of Digital Single-Event Effects: A Survey of SEU and SET Parameters and Comparison With Transistor Performance
5. Single- and Multiple-Event Induced Upsets in ${\rm HfO}_2/{\rm Hf}$ 1T1R RRAM
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