A forming-free ReRAM cell with low operating voltage-Reference-Cited by-同舟云学术

A forming-free ReRAM cell with low operating voltage

Published:2020-11-25 Issue:22 Volume:17 Page:20200343-20200343
ISSN:1349-2543
Container-title:IEICE Electronics Express
language:en
Short-container-title:IEICE Electron. Express

Author:

Yang Binbin¹,Xu Nuo²,Li Cheng¹,Huang Chenglong¹,Ma Desheng¹,Liu Jiahao¹,Arumí Daniel³,Fang Liang¹

Affiliation:

1. Institute for Quantum Information & State Key Laboratory of High Performance Computing, College of Computer, National University of Defense Technology

2. College of Computer, National University of Defense Technology

3. Dept. d’Enginyeria Electrònica, Universitat Politècnica de Catalunya

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/elex/17/22/17_17.20200343/_pdf

Reference32 articles.

1. [1] R. Waser, et al.: “Redox-based resistive switching memories-nanoionic mechanisms, prospects, and challenges,” Adv. Mater. 21 (2009) 2632 (DOI: 10.1002/adma.200900375).

2. [2] C.S. Hwang：“Prospective of semiconductor memory devices: from memory system to materials,” Adv. Electron. Mater. 1 (2015) 1400056 (DOI: 10.1002/aelm.201400056).

3. [3] L. Chua：“Memristor: the missing circuit element,” IEEE Trans. Circuit Theory 18 (1971) 507 (DOI: 10.1109/TCT.1971.1083337).

4. [4] D.B. Strukov, et al.: “The missing memristor found,” Nature 453 (2008) 80 (DOI: 10.1038/nature06932).

5. [5] R. Waser and M. Aono：“Nanoionics-based resistive switching memories,” Nanoscience and Technology: A Collection of Reviews from Nature Journals 1 (2010) 158 (DOI: 10.1142/9789814287005_0016).

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Electrochemically Active Top Electrode Materials on Nanoionic Conductive Bridge Y2O3 Random-Access Memory;Nanomaterials;2024-03-16

2. Resistive switching and battery-like characteristics in highly transparent Ta2O5/ITO thin-films;Scientific Reports;2023-08-31

3. Sol–Gel-Processed Y2O3–Al2O3 Mixed Oxide-Based Resistive Random-Access-Memory Devices;Nanomaterials;2023-08-31

4. Sol–Gel-Processed Y2O3 Multilevel Resistive Random-Access Memory Cells for Neural Networks;Nanomaterials;2023-08-27

5. Resistive switching behavior of TiO2/(PVP:MoS2) nanocomposite hybrid bilayer in rigid and flexible RRAM devices;Memories - Materials, Devices, Circuits and Systems;2023-07