Thickness dependence of resistive switching characteristics of the sol–gel processed Y2O3 RRAM devices

Abstract

Abstract In this study, yttrium oxide (Y2O3)-based resistive random-access memory (RRAM) devices were fabricated using the sol–gel method. The fabricated Y2O3 RRAM devices exhibited conventional bipolar RRAM device characteristics and did not require a forming process. The Y2O3 film thickness was controlled by varying the liquid-phase precursor concentration. As the concentration increased, thicker Y2O3 films were formed. In addition, the concentration of oxygen vacancies increased. The RRAM device properties were not observed for thin Y2O3 films, which had the lowest oxygen vacancy concentration. Moreover, RRAM devices, which consisted of the thickest Y2O3 films with the largest oxygen vacancy concentration, showed poor non-volatile properties. The optimized Y2O3-based RRAM devices with a thickness of 37 nm showed conventional bipolar RRAM device characteristics, which did not require an initial forming process. The fabricated RRAM devices showed a high resistance state to low resistance state ratio of over 104, less than +1.5 V of SET voltage, and −15.0 V of RESET voltage. The RRAM devices also showed promising non-volatile memory properties, without significant degradation after 103 s retention and 102 cycle endurance tests.