Estimation of Surface Recombination Velocity from Thickness Dependence of Carrier Lifetime in n-Type 4H-SiC Epilayers
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference28 articles.
1. Excess Carrier Lifetime Measurement of Bulk SiC Wafers and Its Relationship with Structural Defect Distribution
2. Lifetime-limiting defects in n− 4H-SiC epilayers
3. Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation
4. Excess Carrier Lifetime in a Bulk p-Type 4H–SiC Wafer Measured by the Microwave Photoconductivity Decay Method
5. Carrier lifetime measurement in n− 4H-SiC epilayers
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3. Carrier recombination in highly Al doped 4H-SiC: dependence on the injection conditions;Japanese Journal of Applied Physics;2024-01-01
4. Investigation of carrier lifetime behavior in the 4H-SiC homoepitaxial layer;2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia);2023-08-27
5. Surface defects in 4H-SiC: properties, characterizations and passivation schemes;Semiconductor Science and Technology;2023-06-08
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