Numerical Analysis of Buffer-Trap Effects on Gate Lag in AlGaN/GaN High Electron Mobility Transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference20 articles.
1. GaN-Based RF Power Devices and Amplifiers
2. Trapping effects in GaN and SiC microwave FETs
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5. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
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1. Investigation of DC and RF Characteristics of AlGaN/GaN HEMT With Various Planar Distributed Channel Division;IEEE Transactions on Electron Devices;2024-08
2. TCAD Simulation of the Effect of Buffer Layer Parameters on Single Event Burn-Out in p-GaN Gate HEMTs;IEEE Transactions on Electron Devices;2024-07
3. Enhancement-Mode HEMT Performance and Mitigating Delay Through Double-Heterojunction With Connect Channel Utilization for Trap Effect Reduction;IEEE Access;2023
4. Surface Dispersion Suppression in High-Frequency GaN Devices;Crystals;2022-10-16
5. Effect of InGaN Channel on Radio‐Frequency Performance in High‐Electron‐Mobility Transistors with an InAlGaN Barrier;physica status solidi (a);2022-05-29
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