Physics-based simulation of buffer-trapping effects on slow current transients and current collapse in GaN field effect transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2141653
Reference21 articles.
1. AlGaN/GaN HEMTs-an overview of device operation and applications
2. Trapping effects in GaN and SiC microwave FETs
3. Current/voltage characteristic collapse in AlGaN/GaN heterostructure insulated gate field effect transistors at high drain bias
4. Observation of deep traps responsible for current collapse in GaN metal–semiconductor field-effect transistors
5. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
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1. TCAD Simulation of the Effect of Buffer Layer Parameters on Single Event Burn-Out in p-GaN Gate HEMTs;IEEE Transactions on Electron Devices;2024-07
2. Numerical Analysis of Impact Ionization Effects on Hard Switching in AlGaN/GaN HEMTs;IEEE Transactions on Electron Devices;2023-12
3. High-performance gallium nitride high-electron-mobility transistors with a thin channel and an AlN back barrier;Applied Physics Letters;2023-04-03
4. Modeling the Effects of Threading Dislocations on Current in AlGaN/GaN HEMT;Micromachines;2023-01-24
5. Analysis of Impact Ionization Effects on Current Collapse of AlGaN/GaN HEMTs;IEEE Transactions on Electron Devices;2022-11
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