Light Emitting Diodes with ZnO Current Spreading Layers Deposited from a Low Temperature Aqueous Solution
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/2/i=4/a=042101/pdf
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1. High-transparency Ni/Au ohmic contact to p-type GaN
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4. Roughening Hexagonal Surface Morphology on Laser Lift-Off (LLO) N-Face GaN with Simple Photo-Enhanced Chemical Wet Etching
5. High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency
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