Electrical transport properties and impedance analysis of Au/ZnO nanorods/ITO heterojunction device

Abstract

Abstract Our work involves the growth of well aligned vertical nanorods of ZnO on transparent indium doped tin oxide (ITO) conductive substrate and fabrication of Au/ZnO Nanorods/ITO Heterojunction device. The observation of non-ideal diode current density-voltage (J-V) characteristics of the device has been evaluated with various conduction mechanisms [Ohmic, space-charge limited conduction (SCLC)]. The charge carrier mobility is estimated to be ∼0.05 cm2/Vs. The presence of deep level defects in the ZnO nanorods is accountable for these two different transport mechanisms and it is backed by photoluminescence, distinctly. The estimated density of deep trap states is ntrap ∼ 5.76 × 1013 cm−3. The charge carrier density and built-in potential of this device are obtained from electrochemical impedance spectroscopy (EIS). The average work function of vertical ZnO nanorods is found out to be ∼4.93 eV. Henceforth, our results explain the charge transport mechanism which plays a key role in optoelectronic based devices for various applications.