Characteristics of Polycrystalline ZnO-Based Electrolyte-Solution-Gate Field-Effect Transistors Fabricated on Glass Substrates-Reference-Cited by-同舟云学术

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Characteristics of Polycrystalline ZnO-Based Electrolyte-Solution-Gate Field-Effect Transistors Fabricated on Glass Substrates

Published:2009-07-31 Issue: Volume:2 Page:087001
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Koike Kazuto,Hashimoto Mitsuhiro,Tsuji Kumiho,Seiwa Yasuaki,Ogata Ken-ichi,Sasa Shigehiko,Inoue Masataka,Yano Mitsuaki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/2/i=8/a=087001/pdf

Reference21 articles.

1. Buffer-enhanced room-temperature growth and characterization of epitaxial ZnO thin films

2. Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature

3. Characterization of undoped ZnO layers grown by molecular beam epitaxy towards biosensing devices

4. Immobilization of uricase on ZnO nanorods for a reagentless uric acid biosensor

5. Nanosized flower-like ZnO synthesized by a simple hydrothermal method and applied as matrix for horseradish peroxidase immobilization for electro-biosensing

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1. Nondegenerate Polycrystalline Hydrogen-Doped Indium Oxide (InOx:H) Thin Films Formed by Low-Temperature Solid-Phase Crystallization for Thin Film Transistors;Materials;2021-12-27

2. A comprehensive review of FET‐based pH sensors: materials, fabrication technologies, and modeling;Electrochemical Science Advances;2021-10-03

3. 7‐4: High Mobility Hydrogenated Polycrystalline In‐Ga‐O (IGO:H) Thin‐Film Transistors formed by Solid Phase Crystallization;SID Symposium Digest of Technical Papers;2021-05

4. Hydrogenated In–Ga–Zn–O thin-film transistors with anodized and fluorinated Al2O3 gate insulator for flexible devices;Japanese Journal of Applied Physics;2021-02-10

5. Heterojunction channel engineering to enhance performance and reliability of amorphous In–Ga–Zn–O thin-film transistors;Japanese Journal of Applied Physics;2019-05-28

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