Heterojunction channel engineering to enhance performance and reliability of amorphous In–Ga–Zn–O thin-film transistors
Author:
Funder
Japan Society for the Promotion of Science
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://iopscience.iop.org/article/10.7567/1347-4065/ab1f9f/pdf
Reference56 articles.
1. Nonvolatile Memory With Extremely Low-Leakage Indium-Gallium-Zinc-Oxide Thin-Film Transistor
2. (Invited) Flexible Memory Applications Using Oxide Semiconductor Thin-Film Transistors
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