Buffer-enhanced room-temperature growth and characterization of epitaxial ZnO thin films-Reference-Cited by-同舟云学术

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Buffer-enhanced room-temperature growth and characterization of epitaxial ZnO thin films

Published:2005-06-06 Issue:23 Volume:86 Page:231911
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sasaki Atsushi,Hara Wakana,Matsuda Akifumi,Tateda Norihiro,Otaka Sei,Akiba Shusaku,Saito Keisuke,Yodo Tokuo,Yoshimoto Mamoru

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1947378

Reference14 articles.

1. Will UV Lasers Beat the Blues?

2. Effect of ZnO buffer layer prepared by rf sputtering on heteroepitaxial growth of high-quality ZnO films

3. Raman and photoluminescence of ZnO films deposited on Si (111) using low-pressure metalorganic chemical vapor deposition

4. Microstructural properties of ZnO epitaxial films grown on p-InP(100) substrates at low temperature

5. Superconducting thin films of Y‐Ba‐Cu‐O produced by neodymium:yttrium aluminum garnet laser ablation

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1. Buffer-free epitaxial growth of ZnO(0001) thin films at room temperature by tetramethylammonium hydroxide pretreatment of α-Al<sub>2</sub>O<sub>3</sub>(0001) substrates;Journal of the Ceramic Society of Japan;2023-08-01

2. Room-temperature fabrication of epitaxial ZnO thin films on polymer substrates coated with a seed layer of exfoliated β-Ga<sub>2</sub>O<sub>3</sub> single-crystal thin sheets by pulsed laser deposition;Journal of the Ceramic Society of Japan;2023-05-01

3. Femtosecond pulse laser fabrication of zinc oxide quantum clusters/nanoparticles and their electrical, optical, and chemical characteristics;Journal of Colloid and Interface Science;2022-05

4. A comprehensive review of FET‐based pH sensors: materials, fabrication technologies, and modeling;Electrochemical Science Advances;2021-10-03

5. Solid-phase epitaxial crystallization of β-Ga2O3 thin film by KrF excimer laser irradiation from backside of NiO (111)-buffered α-Al2O3 (0001) substrate at room temperature;Journal of Vacuum Science & Technology A;2021-07

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