Solid-phase epitaxial crystallization of β-Ga2O3 thin film by KrF excimer laser irradiation from backside of NiO (111)-buffered α-Al2O3 (0001) substrate at room temperature
Author:
Affiliation:
1. Department of Materials Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8502, Japan
2. Kanagawa Institute of Industrial Science and Technology, 705-1 Shimoimaizumi, Ebina, Kanagawa 243-0435, Japan
Funder
Japan Society for the Promotion of Science
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
https://avs.scitation.org/doi/pdf/10.1116/6.0000996
Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Fabrication of highly-oriented β-Ga2O3 thin film on ZnO/AlO x -buffered cyclo-olefin polymer substrate by excimer laser annealing at room temperature;Japanese Journal of Applied Physics;2023-04-01
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