7‐4: High Mobility Hydrogenated Polycrystalline In‐Ga‐O (IGO:H) Thin‐Film Transistors formed by Solid Phase Crystallization-Reference-Cited by-同舟云学术

7‐4: High Mobility Hydrogenated Polycrystalline In‐Ga‐O (IGO:H) Thin‐Film Transistors formed by Solid Phase Crystallization

Published:2021-05 Issue:1 Volume:52 Page:69-72
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:SID Symposium Digest of Technical Papers

Author:

Furuta Mamoru¹,Shimpo Kenta¹,Kataoka Taiki¹,Tanaka Daiki¹,Matsumura Toshihiro¹,Magari Yusaku¹,Velichko Rostislav¹,Sasaki Daichi²,Kawashima Emi²,Tsuruma Yuki²

Affiliation:

1. Environmental Science and Engineering Kochi University of Technology Kochi Japan

2. Idemitsu Kosan Co. Ltd. Chiba Japan

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.14612

Reference14 articles.

1. 4.1: Distinguished Paper: High Mobility Top-Gate Zinc Oxide Thin-Film Transistors (ZnO-TFTs) for Active-Matrix Liquid Crystal Displays

2. 4.3: Transparent ZnO Thin Film Transistor Array for the Application of Transparent AM-OLED Display

3. Nonvolatile Memory With Extremely Low-Leakage Indium-Gallium-Zinc-Oxide Thin-Film Transistor

4. Stacked Image Sensor With Green- and Red-Sensitive Organic Photoconductive Films Applying Zinc Oxide Thin-Film Transistors to a Signal Readout Circuit

5. Characteristics of Polycrystalline ZnO-Based Electrolyte-Solution-Gate Field-Effect Transistors Fabricated on Glass Substrates

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