Theoretical Study on Chemical Gradient Generated in Chemically Amplified Resists Based on Polymer Deprotection upon Exposure to Extreme Ultraviolet Radiation
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/2/i=5/a=056503/pdf
Reference23 articles.
1. Recent status and future direction of EUV resist technology
2. Design of Faster High Resolution Resists: Getting More Acid Yield from EUV Photons
3. A Resist Material Study for LWR and Resolution Improvement in EUV Lithography
4. Progress in EUV Resist Development
5. Evaluation of New Molecular Resist for EUV Lithography
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1. Theoretical study of relationships among resolution, line width roughness, and sensitivity of chemically amplified extreme ultraviolet resists with photodecomposable quenchers;Japanese Journal of Applied Physics;2016-10-06
2. Resist material options for extreme ultraviolet lithography;Advanced Optical Technologies;2015-01-01
3. Feasibility study of sub-10-nm half-pitch fabrication by chemically amplified resist processes of extreme ultraviolet lithography: I. Latent image quality predicted by probability density model;Japanese Journal of Applied Physics;2014-09-08
4. Effects of effective reaction radius for neutralization on performance of chemically amplified resists;Japanese Journal of Applied Physics;2014-05-27
5. Theoretical relationship between quencher diffusion constant and effective reaction radius for neutralization in contact hole imaging using chemically amplified extreme ultraviolet resists;Japanese Journal of Applied Physics;2014-05-08
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