Theoretical study of relationships among resolution, line width roughness, and sensitivity of chemically amplified extreme ultraviolet resists with photodecomposable quenchers-Reference-Cited by-同舟云学术

Theoretical study of relationships among resolution, line width roughness, and sensitivity of chemically amplified extreme ultraviolet resists with photodecomposable quenchers

Published:2016-10-06 Issue:11 Volume:55 Page:116501
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kozawa Takahiro,Santillan Julius Joseph,Itani Toshiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/55/i=11/a=116501/pdf

Reference46 articles.

1. Chemical amplification in the design of dry developing resist materials

2. Chemical Amplification Resists for Microlithography

3. Soft x-ray reduction lithography using multilayer mirrors

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3. Resist image quality control via acid diffusion constant and/or photodecomposable quencher concentration in the fabrication of 11 nm half-pitch line-and-space patterns using extreme-ultraviolet lithography;Japanese Journal of Applied Physics;2018-04-19

4. Relationship between sensitizer concentration and resist performance of chemically amplified extreme ultraviolet resists in sub-10 nm half-pitch resolution region;Japanese Journal of Applied Physics;2016-11-25