Feasibility study of sub-10-nm half-pitch fabrication by chemically amplified resist processes of extreme ultraviolet lithography: I. Latent image quality predicted by probability density model-Reference-Cited by-同舟云学术

Feasibility study of sub-10-nm half-pitch fabrication by chemically amplified resist processes of extreme ultraviolet lithography: I. Latent image quality predicted by probability density model

Published:2014-09-08 Issue:10 Volume:53 Page:106501
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kozawa Takahiro,Santillan Julius Joseph,Itani Toshiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/53/i=10/a=106501/pdf

Reference43 articles.

1. Extreme Ultraviolet Lithography Development in the United States

2. A Comprehensive Review of EUV Resist Materials and Processing at Selete

3. Readiness of EUV Lithography for Insertion into Manufacturing: The IMEC EUV Program

4. Novel EUV Resist Materials and Process for 20 nm Half Pitch and Beyond

5. EUV Resist Materials Design for 15 nm Half Pitch and Below

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