Study of RLS trade-off mitigation utilizing a novel negative chemically amplified resist for high resolution patterning
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Publisher
SPIE
Reference12 articles.
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2. Patterning performance of chemically amplified resist in EUV lithography;Fujii,2016
3. EUV for HVM: towards an industrialized scanner for HVM NXE3400B performance update;Es,2018
4. Feasibility study of sub-10-nm half-pitch fabrication by chemically amplified resist processes of extreme ultraviolet lithography: I. Latent image quality predicted by probability density model
5. Relationship between Defects and Stochastic Effect in Chemically Amplified Resists Used for Extreme Ultraviolet Lithography
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