Study of RLS trade-off mitigation utilizing a novel negative chemically amplified resist for high resolution patterning

Author:

Enomoto Satoshi,Machida Kohei,Naito Michiya,Kozawa Takahiro

Publisher

SPIE

Reference12 articles.

1. Negative-tone imaging with EUV exposure toward 13nm hp;Tsubaki,2016

2. Patterning performance of chemically amplified resist in EUV lithography;Fujii,2016

3. EUV for HVM: towards an industrialized scanner for HVM NXE3400B performance update;Es,2018

4. Feasibility study of sub-10-nm half-pitch fabrication by chemically amplified resist processes of extreme ultraviolet lithography: I. Latent image quality predicted by probability density model

5. Relationship between Defects and Stochastic Effect in Chemically Amplified Resists Used for Extreme Ultraviolet Lithography

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