Relationship between Defects and Stochastic Effect in Chemically Amplified Resists Used for Extreme Ultraviolet Lithography
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference44 articles.
1. EUV Resist Materials for 16 nm And below Half Pitch Applications
2. Advances in Low Diffusion EUV Resists
3. High-sensitivity EUV Resists based on Tetrafluoroethylene contained Fluoropolymers
4. Theoretical Study on Chemical Gradient Generated in Chemically Amplified Resists Based on Polymer Deprotection upon Exposure to Extreme Ultraviolet Radiation
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