Abstract
AbstractOwing to the worldwide efforts, the development of extreme ultraviolet (EUV) lithography has significantly progressed during the past decade. The resolution of chemically amplified resists has reached sub-16-nm region. From the viewpoint of the extendibility of EUV lithography, the development of resist materials capable of resolving sub-10-nm is an urgent task. In this review, the resist material options for EUV lithography are discussed on the basis of the EUV sensitization mechanisms after reviewing the problems for the sub-10-nm fabrication.
Subject
Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference116 articles.
1. Kai;Hirose;Appl Phys Express,2008
Cited by
1 articles.
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