Improvement of Channel Mobility in Inversion-Type n-Channel GaN Metal–Oxide–Semiconductor Field-Effect Transistor by High-Temperature Annealing
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference19 articles.
1. High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire with power density of over 4.5 W/mm at 20 GHz
2. 30-W/mm GaN HEMTs by Field Plate Optimization
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4. 8.5-<tex>$hbox mOmega cdot hbox cm^2$</tex>600-V Double-Epitaxial MOSFETs in 4H–SiC
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1. Impacts of post-deposition annealing on hole trap generation at SiO2/p-type GaN MOS interfaces;Applied Physics Express;2024-08-01
2. Transport Properties in GaN Metal–Oxide–Semiconductor Field‐Effect Transistor Almost Free of Interface Traps with AlSiO/AlN/p‐Type GaN Gate Stack;physica status solidi (RRL) – Rapid Research Letters;2024-07-09
3. Suppression of positive bias instability by inserting polarized AlN interlayer at AlSiO/p-type GaN interface in metal–oxide–semiconductor field-effect transistor;Applied Physics Letters;2024-07-08
4. Enhanced field-effect mobility (>250 cm2/V·s) in GaN MOSFETs with deposited gate oxides via mist CVD;Applied Physics Express;2024-06-01
5. Reduction in Gap State Density near Valence Band Edge at Al2O3/p‐type GaN Interface by Photoelectrochemical Etching and Subsequent SiO2 Cap Annealing;physica status solidi (b);2024-05-15
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