Erbium silicided Schottky Source/Drain Silicon Nanowire N-Metal–Oxide–Semiconductor Field-Effect Transistors-Reference-Cited by-同舟云学术

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Erbium silicided Schottky Source/Drain Silicon Nanowire N-Metal–Oxide–Semiconductor Field-Effect Transistors

Published:2008-04-25 Issue:4 Volume:47 Page:3277-3281
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Tan Eu Jin,Pey Kin Leong,Singh Navab,Chi Dong-Zhi,Lo Guo-Qiang,Lee Pooi See,Hoe Keat-Mun,Chin Yoke King,Cui Guang Da

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference14 articles.

1. Performance advantage of schottky source/drain in ultrathin-body silicon-on-insulator and dual-gate cmos

2. N-channel FinFETs With 25-nm Gate Length and Schottky-Barrier Source and Drain Featuring Ytterbium Silicide

3. Kinetics and morphology of erbium silicide formation

4. Synthesis and Fabrication of High-Performance n-Type Silicon Nanowire Transistors

5. High Performance Silicon Nanowire Field Effect Transistors

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dopant segregated Schottky barrier nanowire transistors using low-temperature microwave annealed ytterbium silicide;Japanese Journal of Applied Physics;2014-10-03

2. ELECTRICAL CHARACTERIZATION OF PLANAR SILICON NANOWIRE FIELD-EFFECT TRANSISTORS;International Journal of Nanoscience;2012-08

3. The characteristics of sub-10nm gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors;Thin Solid Films;2012-01

4. High-performance silicon nanowire field-effect transistor with silicided contacts;Semiconductor Science and Technology;2011-05-23

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