N-channel FinFETs With 25-nm Gate Length and Schottky-Barrier Source and Drain Featuring Ytterbium Silicide-Reference-Cited by-同舟云学术

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N-channel FinFETs With 25-nm Gate Length and Schottky-Barrier Source and Drain Featuring Ytterbium Silicide

Published:2007-02 Issue:2 Volume:28 Page:164-167
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Lee Rinus T. P.,Lim Andy Eu-Jin,Tan Kian-Ming,Liow Tsung-Yang,Lo Guo-Qiang,Samudra Ganesh S.,Chi Dong Zhi,Yeo Yee-Chia

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/4068938/04068952.pdf?arnumber=4068952

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4. Performance Analyses of Planar Schottky Barrier MOSFETs with Dual Silicide Layers at Source/Drain on Bulk Substrates and Material Studies of ErSix/CoSi2/Si Stack Interface*;Chinese Physics Letters;2020-03-01

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