Location and Crystallographic Orientation Control of Si Grains through Combined Metal Induced Lateral Crystalization and µ-Czochralski Process
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference5 articles.
1. Dependence of Single-Crystalline Si TFT Characteristics on the Channel Position Inside a Location-Controlled Grain
2. Advanced excimer-laser crystallization process for single-crystalline thin film transistors
3. Mobility Anisotropy of Electrons in Inversion Layers on Oxidized Silicon Surfaces
4. Location and Orientation Control of Si Grain by Combining Metal-Induced Lateral Crystallization and Excimer Laser Annealing
5. Silicide formation and silicide‐mediated crystallization of nickel‐implanted amorphous silicon thin films
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1. Formation of (100)-oriented large polycrystalline silicon thin films with multiline beam continuous-wave laser lateral crystallization;Japanese Journal of Applied Physics;2018-02-15
2. Ultrahigh-performance (100)-oriented polycrystalline silicon thin-film transistors and their microscopic crystal structures;Applied Physics Express;2017-04-06
3. Characterization of (100)-Dominantly Oriented Poly-Si Thin Film Transistors Using Multi-Line Beam Continuous-Wave Laser Lateral Crystallization;ECS Transactions;2016-09-23
4. Improvement in Characteristic Variability of TFTs Using Grain Growth Control by Micro Thermal Plasma Jet Irradiation on a-Si Strips;Journal of Display Technology;2014-11
5. Effect of an Oxide Cap Layer and Fluorine Implantation on the Metal-Induced Lateral Crystallization of Amorphous Silicon;ECS Journal of Solid State Science and Technology;2012-12-07
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