Effect of an Oxide Cap Layer and Fluorine Implantation on the Metal-Induced Lateral Crystallization of Amorphous Silicon
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference20 articles.
1. High-Performance Nanowire TFTs With Metal-Induced Lateral Crystallized Poly-Si Channels
2. Effect of Fluorine on the Lateral Crystallization of Amorphous Silicon Nanowires
3. Rectangular Polysilicon Nanowires by Top-Down Lithography, Dry Etch and Metal-Induced Lateral Crystallization
4. Insitutransmission electron microscopy studies of silicide‐mediated crystallization of amorphous silicon
5. Impacts of the Underlying Insulating Layers on the MILC Growth Length and Electrical Characteristics
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1. Effects of crystallinity of silicon channels formed by two metal-induced lateral crystallization methods on the cell current distribution in NAND-type 3D flash memory;Japanese Journal of Applied Physics;2024-03-20
2. Deposition of Very-Low-Hydrogen-Containing Silicon at a Low Temperature Using Very-High-Frequency (162 MHz) SiH4 Plasma;Micromachines;2022-01-24
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