High-Performance Nanowire TFTs With Metal-Induced Lateral Crystallized Poly-Si Channels-Reference-Cited by-同舟云学术

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High-Performance Nanowire TFTs With Metal-Induced Lateral Crystallized Poly-Si Channels

Published:2008-05 Issue:5 Volume:29 Page:474-476
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Chang Chia-Wen,Chen Szu-Fen,Chang Che-Lun,Deng Chih-Kang,Huang Jiun-Jia,Lei Tan-Fu

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/4494611/04494613.pdf?arnumber=4494613

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Superior subthreshold characteristics of gate-all-around p-type junctionless poly-Si nanowire transistor with ideal subthreshold slope;Japanese Journal of Applied Physics;2020-06-30

2. Detection of Biomarkers for Different Diseases on Biosensor Surfaces;Biomarkers and Biosensors;2015

3. Effect of an Oxide Cap Layer and Fluorine Implantation on the Metal-Induced Lateral Crystallization of Amorphous Silicon;ECS Journal of Solid State Science and Technology;2012-12-07

4. Minimizing variation in the electrical characteristics of gate-all-around thin film transistors through the use of multiple-channel nanowire and NH3 plasma treatment;Microelectronic Engineering;2012-03

5. Phase-Change Memory With Multifin Thin-Film-Transistor Driver Technology;IEEE Electron Device Letters;2012-03

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